2N5672 semelab plc reserves the right to change test conditions, paramet er limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. howeve r semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk doc 7506, issue 2 features ? high current & high speed switching ? high reliability screening options available including:- ? semelab space level discrete component processing which is based on conformance & screening levels of mil-prf-19500 & escc 5000 applications for high reliability general purpose applications, where high speed & high current switching and amplification is required. npn high power silicon transistor to-3 (to-204ae) pin 1 C base pin 2 C emitter case C collector
mechanical data dimensions in mm (inches) absolute maximum ratings t case = 25c unless otherwise stated v cbo collector - base voltage 150v v ceo collector - emitter voltage (i b = 0) 120v v ebo emitter C base voltage (i c = 0) 7.0v i c continuous collector current 30a i b base current 10a p tot total power dissipation at t case 25c 140w t amb 25c 6w t stg operating and storage temperature range -65 to +200c t j junction temperature 200c
2N5672 semelab plc reserves the right to change test conditions, paramet er limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. howeve r semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk doc 7506, issue 2 thermal data r thj-case thermal resistance junction - case max 1.25 c/w electrical characteristics (t case =25c unless otherwise stated) parameter test conditions min. typ. max. unit v (br)cer * collector emitter breakdown voltage i c = 200ma i b = 0 120 - - v (br)cex collector emitter breakdown voltage i c = 200ma v be = -1.5v 150 - - v (br)cer collector emitter breakdown voltage i c = 200ma r be = 50 140 - - v i cex collector-emitter cut-off current v ce = 135v v be = -1.5v - - 10 i ceo collector-emitter cut-off current v ce = 80v i b = 0a - - 10 i ebo emitter-base cut-off current v eb = 7.0v i c = 0 - - 10 ma i c = 20a v ce = 5.0v 20 - - h fe * dc current gain i c = 15a v ce = 2.0v 20 - 100 v be * base emitter voltage i c = 15a v ce = 5.0v - - 1.6 v ce sat * collector-emitter saturation voltage i c = 15a i b = 1.2a - - 0.75 v be sat * base-emitter saturation voltage i c = 15a i b = 1.2a - - 1.5 v i c = 2a v ce = 10v f t transition frequency f = 5mhz 50 - - mhz i e = 0 v cb = 10v c obo collector base capacitance f = 1.0mhz - - 900 pf t on switching time - - 0.5 t s switching time - - 0.5 t off switching time i c = 15a v cc = 30v i b1 = i b2 = 1.2a - - 1.5 s * pulse test t p = 300 s, < 2%
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